| 摘要 |
PROBLEM TO BE SOLVED: To enable smooth movement of carriers between a semiconductive film and a substrate, by forming an insulating film formed on a semiconductor substrate and a semiconductive film formed on the insulating film. SOLUTION: After a natural oxide film formed on a semiconductor substrate on which a PN junction is formed is removed, a thin oxide film SiO2 4 is formed by heating H2 O2 . An SiPOS film 5 as a semiconductive film is formed on the oxide film 4 by a CVD method using N2 O, SiH4 gas, and is patterned by photolithography. Further, by a CVD method, the SiPOS film 5 is covered with an SiO2 film 6. By patterning the film 6, a cathode 7 and an anode 8 are formed and a diode is obtained. As a result, the interface of the substrate 1 and the semiconductive film 5 can be maintained to be stable and clean, so that a leakage current due to contamination can be prevented without obstructing movement of carriers. |
