| 发明名称 |
PROCEDE DE TRAITEMENT DE SUBSTRATS SEMI-CONDUCTEURS ET STRUCTURES OBTENUES PAR CE PROCEDE |
| 摘要 |
The invention concerns a method for treating a substrate comprising a semi-conducting layer (4) on at least one of its surfaces. Said method comprises a step for annealing the substrate and a step for forming an oxide layer (6) at the semi-conducting layer (4) surface, carried out before the end of the annealing step, protecting the remainder of the semi-conducting layer (4). |
| 申请公布号 |
FR2777115(A1) |
申请公布日期 |
1999.10.08 |
| 申请号 |
FR19980004299 |
申请日期 |
1998.04.07 |
| 申请人 |
COMMISSARIAT A L'ENERGIE ATOMIQUE |
发明人 |
MALEVILLE CHRISTOPHE;BARGE THIERRY;ASPAR BERNARD;MORICEAU HUBERT;AUBERTON HERVE ANDRE JACQUES |
| 分类号 |
H01L21/324;H01L21/02;H01L21/265;H01L21/316;H01L21/322;H01L21/762;H01L27/12 |
主分类号 |
H01L21/324 |
| 代理机构 |
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代理人 |
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