| 发明名称 |
MEMORY DEVICE, ITS MANUFACTURE, INTEGRATED CIRCUIT, AND MANUFACTURE OF SEMICONDUCTOR DEVICE |
| 摘要 |
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| 申请公布号 |
JPH11274420(A) |
申请公布日期 |
1999.10.08 |
| 申请号 |
JP19980321377 |
申请日期 |
1998.10.28 |
| 申请人 |
SONY CORP |
发明人 |
DURHAM PAL GOSAIN;NOMOTO KAZUMASA;JONATHAN WESTWATER;NAKAKOSHI MIYAKO;USUI SETSUO;NOGUCHI TAKASHI;MORI YOSHIFUMI |
| 分类号 |
H01L21/8247;B82B1/00;H01L21/28;H01L21/822;H01L21/84;H01L27/10;H01L27/115;H01L27/12;H01L29/788;H01L29/792;(IPC1-7):H01L27/10;H01L21/824 |
主分类号 |
H01L21/8247 |
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