发明名称 METHOD FOR OBTAINING COPPER STUD BY C4 PLATING
摘要 <p>PROBLEM TO BE SOLVED: To enable plating second metal on first metal without using a mask, by forming a recessed part in an insulating layer, exposing a part of a first metal feature, and forming a conducting barrier layer and a plated shield layer in order on the insulating layer and the exposed part of the first metal feature. SOLUTION: A part of light metal 3 is exposed by forming a recessed part. A conducting barrier layer 11 is arranged on an insulating layer. After the conducting barrier layer 11 is stuck, a shield layer 13 is stuck on the conducting barrier layer 11 containing the wall surface and the bottom surface of the recessed part. After the shield layer 13 is formed, photoresist is stuck on the shield layer 13. A part 15 of a resist layer which is left in the recessed part and protects the shield layer 13 in the recessed part is eliminated. After the resist is eliminated, lead-tin or other conductive metal 17 is subjected to electroplating on a part of the shield layer 13 left in the recessed part. As a result, second metal can be directly plated on first metal without using a mask.</p>
申请公布号 JPH11274208(A) 申请公布日期 1999.10.08
申请号 JP19990003342 申请日期 1999.01.08
申请人 INTERNATL BUSINESS MACH CORP <IBM> 发明人 SHIBRIAN E UZOO;DANIEL C EDELSTEIN
分类号 C25D7/12;C23C18/31;H01L21/288;H01L21/60;(IPC1-7):H01L21/60 主分类号 C25D7/12
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