| 摘要 |
PROBLEM TO BE SOLVED: To allow application to analog/digital mixed type for improved yield and lower cost, with a capacity element mounted. SOLUTION: On a silicon substrate 1, a lower part electrode 13 is formed. Further an inter-layer insulating film 4 comprising an hole 5 and a dielectrics film 6 are sequentially deposited, after that, a connection hole 7 and a wiring groove are opened at the same time and a tungsten film is deposited. Then, the tungsten film is polished by CMP(chemical mechanical polish) method with the dielectrics film as a polishing stopper, an upper part electrode 15, a connection plug 9, a wiring 8, etc., are formed at the same time, while these are metal- wired. |
