SEMICONDUCTOR THIN FILM WITH CIS-BASED CHALCOPYRITE, STRUCTURE, SOLAR BATTERY, WITH THE THIN FILM AND THEIR MANUFACTURE

摘要

PROBLEM TO BE SOLVED: To provide a graded band gap structure with good repeatability at low cost. SOLUTION: In a semiconductor thin film with a CIS-based chalcopyrite structure, with a large band gap energy at a position near (4 a substrate 1, and a small band gap at a position near a film surface put in contact with an n-type semiconductor. In this case, the composition of Al and In is changed sequentially in a way that an atom number ratio of Al/(In+Al) near the substrate 1 is smaller than that of Al/(In+Al) on the film surface.