| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a high-resolution photomask by decreasing the fluctuations in the critical dimensions(CD). SOLUTION: The decrease of the fluctuations in the CD may be embodied by using a thin conductive transfer layer 13 which may be patterned by electron beam lithography and dry or wet etching. The patterns are transferred to a lower layer film 12 by reactive ion etching. The lower layer film may be made opaque or partially transparent at 365, 248 and 193 nm. The thin conductive transfer layer 13 is formed of, for example, a thin Cr film and the opaque or partially transparent material may be formed of a carbon film, silicide metal or silicide oxy-nitride film. |
