| 摘要 |
<p>PROBLEM TO BE SOLVED: To eliminate fluctuation of timings for starting write operation to a memory cell transistor. SOLUTION: Transistors 21, 22 are connected in series between the power supply and the ground, a high potential Vhv is impressed to the gate of transistor 21 and a first control. potential Vrn is impressed to the gate of transistor 22 to maintain a constant potential difference for the ground potential. Transistors 23, 24 are connected in series between the power supply and the ground and a second control potential Vrn is impressed to the gate of transistor 23 to maintain a constant potential difference for the power supply potential and a potential Va of a first node 25 between the transistors 21, 22 is impressed to the gate of transistor 24. A second node potential Vb between the transistors 23, 24 is output as the control signal HE.</p> |
