发明名称 THIN-FILM MULTILAYER CIRCUIT SUBSTRATE AND ITS MANUFACTURE
摘要 PROBLEM TO BE SOLVED: To simplify a multilayer process, reduce a via hole occupation space, and to increase density by forming integrally the multilayer wiring layer part of a laminate film and a core substrate. SOLUTION: When upper and lower wiring patterns 5 are connected via at least two interlayer insulation films, via holes 3 and 4 that penetrate at least two interlayer insulation films are provided and are connected directly, thus reducing the occupation space of the via holes 3 and 4 and hence increasing density. A laminate film 6 for constituting a multilayer wiring part 1 is made of a resin film 7 that becomes the interlayer insulation film and a metal thin film 8. Then, for simplifying the succeeding formation process of the wiring patterns 5, a resin film 9 that becomes a pattern formation mask is provided on the surface of the metal thin film 8, thus simplifying a multiple-stage build-up process and directly connecting the wiring pattern to a Cu via of being filled into a via hole through the interlayer insulation film with at least two layers and hence reducing the occupation space of the via.
申请公布号 JPH11274731(A) 申请公布日期 1999.10.08
申请号 JP19980079811 申请日期 1998.03.26
申请人 FUJITSU LTD 发明人 NAKAGAWA KANAE;TSUKAMOTO KOJI
分类号 H05K3/00;H05K3/46;(IPC1-7):H05K3/46 主分类号 H05K3/00
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