| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor storage device, in which element activating areas in memory cells can only by formed in rectangular shapes and which can be improved in characteristics, such as the storing and holding characteristics, etc., and the degree of integration. SOLUTION: In a semiconductor storage device, an element activating region 61 of an NMOS transistor 14 for driving and the element activating region 61b of another NMOS transistor 21 for transfer are separately provided and the regions 61a and 61b are formed in the rectangular shapes. Therefore, the regions 61a and 61b can be formed in designed shapes, and a gate electrode 33 and a word line 25 can be formed with widths, etc., as designed. In addition, the characteristics of inverters 12 and 13 can be balanced with each other, and shifting, etc., can be utilized easily at the performing of lithography. |
