| 摘要 |
PROBLEM TO BE SOLVED: To prevent the deterioration of crystallinity occurring when a GaN- based crystal film is grown directly on a single crystal substrate (e.g. a sapphire substrate) and at the same time to effectively prevent the increase of cost owing to dividing the crystal growing process into at least two steps and the deterioration of crystallinity resulting from it. SOLUTION: In a semiconductor device having a GaN-based compound semiconductor film 106 including at least gallium nitride(GaN) on a single crystal substrate 101, GaN-based compound semiconductor regions 102, 103 with different growing speeds between the single crystal substrate 101 and the GaN-based compound semiconductor film 106 are selectively formed on the surface of the single crystal substrate 101. |
