| 摘要 |
PROBLEM TO BE SOLVED: To uniformize the surface of a GaN buffer layer to lessen the crystal defects, by laminating a low-temp. buffer layer and high-temp. GaN layer. SOLUTION: In step 1 a first and second semiconductor layers are formed at their substrate temp. set to less than and over 700 deg.C, respectively, and in step 2 a second semiconductor region is formed at a substrate temp. set to over 700 deg.C. The growth temp. is e.g. set to 520 deg.C, 760 deg.C and 1050 deg.C for a low- temp. buffer layer 102, InGaN-GaN strain quantum well active layer 107 and other layers, respectively. By laminating the GaN low-temp. grown layer and high-temp. grown layer, a crystal with little defects can be easily obtd. and high-reliability blue-ultraviolet light emitting devices can be manufactured. |
