MANUFACTURE OF THIN FILM INSULATING GATE-TYPE SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To simplify a manufacturing step and reduce ruggedness of a thin film transistor. SOLUTION: A gate electrode 102 is formed on an insulating surface, and a gate insulating film 104 is formed on the gate electrode 102. An amorphous silicon film is formed on the gate insulating film 104. The amorphous silicon film is crystallized by using laser to form a polycrystal silicon film. A mask 1 is formed on the polycrystal silicon film and in this state with the mask 1, the polycrystal silicon is doped with impurity, and a laser beam is cast to the polycrystal silicon film.