| 摘要 |
PROBLEM TO BE SOLVED: To deposit silicon at a low temperature, by deciding a window on a single crystal silicon substrate, and generating an inter-lattice defect in terms of atoms at a specified rate in the window. SOLUTION: A window 13 is given on a single crystal silicon substrate 11. The surface of the area of a layer which is not covered by the window is processed in a way that a lattice defect is generated at the rate of one percent in terms of atoms to the depth of below 5μm in a crystal lattice in a region 14 which is not covered. When the stage of any annealing is not executed immediately after the processing, an upper layer 15 is processed with conditions that a state is that of pressure reduction at the temperature below that at which epitaxial deposition is generally executed, a range is 600-700 deg.C and below 900 deg.C, reaction gas is silane (SiH4 ) and pressure reduction is about 0.1×10<5> Pa (80 Torr). The layer 15 is similar to the substrate 11 but it has single crystal structure following a crystal axis different form the crystal axis of the substrate 11.
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