| 摘要 |
<p>PROBLEM TO BE SOLVED: To easily and rapidly realize the high purity at a low cost by heating and melting black gallium fine particles generated in pickling low purity gallium or gallium scraps while bringing them into contact with metal oxides to remove coating oxides or the like. SOLUTION: Low purity Ga including by-products in manufacturing aluminum or Ga scraps obtained in machining GaAs single crystal is pickled while stirring it in a 0.001-0.1 N solution of such as hydrochloric acid and nitric acid. A part of impurities is eluted into a pickling solution out of Ga, and the suspension of black Ga fine particles is generated. The particles are collected, and heated and melted at 600-1000 deg.C at the pressure of >=10<-5> TORR in a container for vacuum heating while bringing them into contact with formed bodies or powder of the metal oxide. The metal oxide is preferably aluminum oxide or the like. A part of impurities are evaporated and removed from Ga, and impurities contained in the oxide and hydroxide on its surface are removed to increase the purity to >=99.9999%.</p> |
