| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for patterning a tin oxide thin film at a high etching rate and an etchant improved in service life. SOLUTION: In the method for pattern the tin oxide thin film by etching the tin oxide thin film formed on a glass substrate, an etching atmosphere is formed of an atmosphere of gas consisting of >=1 kind selected from nitrogen, carbon dioxide, helium, neon and argon. A reducible etchant contg. hydroiodic acid is used as the etchant. The etchant is prepd. by mixing the hydroiodic acid and iodide. |
