| 摘要 |
PROBLEM TO BE SOLVED: To reduce the problem of the waste liquid of a polishing liquid, obtain the polish finish with the same degree as an usual method, make a polishing work efficient, obtain the smoothness of the surface of the material to be polished more quickly and further obtain the greater smoothness without surface flag, in a process for polishing a substrate material. SOLUTION: When the material to be polished is polished, while adding a polishing liquid, while pushing the material to be polished 4 to a surface plate for polishing 1 and rubbingly sliding the surface plate for polishing and/or the material to be polished, the surface plate for polishing 1 is composed mainly of silica (silicon dioxide) and the forming body for polishing surface area incidental member with a bulk density of 0.2-1.5 g/cm<3> and BET ratio polishing and of 10-400 m<2> /g and an average grain diameter of 0.001-0.5 μm. The area 2 in which the forming body for polishing is arranged, stays more inside than the locus 7 of the outer periphery of the material to be polished. |
