Semiconductor device and method for forming the same

摘要

A thin film transistor device incorporates a silicide film contacting the source and drain. The silicide layer substantially reduces parasitic resistance between the source and drain of the device, improving the performance of the TFT. The silicide layer may be formed by covering the silicon semiconductor with a metal and irradiating the metal with a laser to initiate a reaction with the adjacent silicon to produce a silicide film. The layer may also be formed by rigidly adhering a metal coating to the exposed source and drain regions using a triangular-shaped insulator, and allowing the metal to react with silicon.