| 摘要 |
A method for fabricating a semiconductor laser diode and the laser diode constructed therewith. A laser diode according to the present invention is constructed by depositing a buffer layer (9) on a substrate (8). A crystalline layer (10-13) is then deposited on the buffer layer (9). The crystalline layer (10-13) includes the waveguide for the laser. A portion (110) of the buffer layer (9) is etched from under the crystalline layer (10-13) leaving a portion (110) of the crystalline layer (10-13) cantilevered over the substrate (8). The crystalline layer (10-13) is then cleaved in the cantilevered portion (110) to generate a reflecting surface (15) for reflecting light generated in the waveguide. This method is well suited for GaN based laser diodes that are to be constructed on sapphire substrates. |
