发明名称 Single crystal wafers and a method of preparation thereof
摘要 Improved commercial single crystal wafers (250), as shipped to end users form a full circle, and comprise a "stress concentration notch" (172) which accurately defines a desired cleavage plane. The stress concentration notch is introduced into the wafers in bulk by means of a properly oriented cut along the length of a single crystal ingot, after machining the ingot to the desired end product diameter, and prior to sawing the ingot into slices. The stress concentration notch uniquely defines the first and second faces of the wafer.
申请公布号 US5962915(A) 申请公布日期 1999.10.05
申请号 US19970949729 申请日期 1997.10.14
申请人 ANERKAN XTAL TECHNOLOGY, INC 发明人 YOUNG, GARY SHEN-CHENG;ZHANG, SHAN-XIANG
分类号 B28D1/00;B28D5/00;C30B33/00;(IPC1-7):H01L21/306 主分类号 B28D1/00
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