发明名称 |
Single crystal wafers and a method of preparation thereof |
摘要 |
Improved commercial single crystal wafers (250), as shipped to end users form a full circle, and comprise a "stress concentration notch" (172) which accurately defines a desired cleavage plane. The stress concentration notch is introduced into the wafers in bulk by means of a properly oriented cut along the length of a single crystal ingot, after machining the ingot to the desired end product diameter, and prior to sawing the ingot into slices. The stress concentration notch uniquely defines the first and second faces of the wafer.
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申请公布号 |
US5962915(A) |
申请公布日期 |
1999.10.05 |
申请号 |
US19970949729 |
申请日期 |
1997.10.14 |
申请人 |
ANERKAN XTAL TECHNOLOGY, INC |
发明人 |
YOUNG, GARY SHEN-CHENG;ZHANG, SHAN-XIANG |
分类号 |
B28D1/00;B28D5/00;C30B33/00;(IPC1-7):H01L21/306 |
主分类号 |
B28D1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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