| 摘要 |
A method of manufacturing a photomask includes the steps of determining deviation quantities between positions of first and second resist patterns by comparison between the first and second resist patterns, calculating quantities for shifting mask pattern positions based on the deviation quantities between the resist pattern positions, respectively, calculating quantities for shifting drawing fields based on the quantities for shifting the mask pattern positions, respectively, and drawing predetermined mask patterns on a mask substrate in accordance with the quantities for shifting the drawing fields, respectively.
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