发明名称 Low inductance superconductive integrated circuit and method of fabricating the same
摘要 A high-temperature (10 K) superconductive integrated circuit has a ground plane (2), an interlevel dielectric (6), and a low value resistor (18) to provide conductive paths to reduce parasitic circuit inductances, thereby increasing the speed and performance of the integrated circuit. The circuit also includes a high value resistor (20) connected between interconnect wires (34) to produce a desired resistance with a short distance between the interconnect wires (34), thereby significantly reducing the circuit area. A method of fabricating the integrated circuit includes depositing the interlevel dielectric (6) on the ground plane (2) in separate steps, depositing and etching the trilayer (12, 14, 16), etching the low value resistor (18) on the dielectric (6), depositing the high value resistor (20) at substantially the same level above the ground plane (2) as the interconnect wires (22) of the first wire layer (24), and etching the interconnect wires (34) of the second wire layer (32) on the high value resistor (20).
申请公布号 US5962865(A) 申请公布日期 1999.10.05
申请号 US19970833954 申请日期 1997.04.11
申请人 TRW INC. 发明人 KERBER, GEORGE L.;ABELSON, LYNN A.;ELMADJIAN, RAFFI N.;LADIZINSKY, ERIC G.
分类号 H01L39/22;H01L27/18;H01L39/24;(IPC1-7):H01L29/06 主分类号 H01L39/22
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