发明名称 |
Secondary storage device using nonvolatile semiconductor memory |
摘要 |
A secondary storage device using a nonvolatile semiconductor memory in which individual block areas constituting the nonvolatile semiconductor memory can be used up to their limit of use. When the number of repetitions of erasure in a second block area has reached a predetermined reference value, a searching unit searches active block areas for an alternate block area. A second writing unit writes information which has been stored in the alternate block area, into the second block area. A second correspondence modifying unit associates the physical block number with the logical block number and causes a logical-physical correspondence storing unit to store the correspondence of the thus-associated block numbers. A second erasing unit erases the information stored in the alternate block area and treats the block area with the physical block number as a spare block area.
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申请公布号 |
US5963474(A) |
申请公布日期 |
1999.10.05 |
申请号 |
US19980160858 |
申请日期 |
1998.09.25 |
申请人 |
FUJITSU LIMITED |
发明人 |
UNO, HIROAKI;NAGUSA, YASUTSUGU;ONODERA, TAKASHI;MIYASHITA, HIDEAKI;KUWAKO, KENICHI |
分类号 |
G06F12/16;G06F3/06;G06F12/02;G11C16/34;G11C29/00;(IPC1-7):G11C16/04;G11C7/00 |
主分类号 |
G06F12/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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