| 摘要 |
A method for producing a semiconductor configuration, such as a field plate insulating transistor, is suitable for providing mutual insulation of two complementary wells in a substrate. A first insulation layer, a dopable layer and a sacrificial layer are applied on the substrate. A first region of the sacrificial layer is removed to form an edge through the use of a first mask technique, and a first region of the dopable layer which is thereby bared is doped simultaneously with the substrate located beneath, creating the first well. The second well is produced analogously, with the edge serving as an adjustment mark for a requisite second mask technique. It is not until after the doping that a second insulation layer is applied, which is then structured to form the insulating transistor. Advantageously, less energy is required to produce sufficiently deep wells by implantation doping, including beneath the insulating transistor, than if the doping is not carried out until after the application of the second insulation layer.
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