METHOD FOR FABRICATING TANTALUM OXIDATION FILM AND METHOD FOR FABRICATING CAPACITOR OF SEMICONDUCTOR DEVICE USING THE SAME

摘要

PURPOSE: A method for fabricating a capacitor of a semiconductor device is provided to prevent a lack of an oxygen by reducing a carbon amount in a Ta2O5 forming the Ta2O5 film by use of an ozone as a reaction gas. CONSTITUTION: A method for fabricating a capacitor of a semiconductor device comprises the steps of: forming a lower electrode(12); forming a Ta2O5 film(13) on the lower electrode by use of a tantalum ethylate (Ta(OC2CH5)5) as a reaction raw material and an ozone(O3) as a reaction gas; and forming an upper electrode(14) on the Ta2O5 film. The tantalum ethylate of a vapor phase is formed by injecting a tantalum ethylate of a liquid phase in an evaporator of a temperature of 150°C to 190°C.