Methods for forming integrated circuit capacitors including dual layer electrodes

摘要

A method for forming an integrated circuit capacitor includes the steps of forming a first electrode layer on a substrate wherein the first electrode has a first dopant concentration, and forming a second electrode layer on the first electrode layer opposite the substrate. The second electrode layer has a second dopant concentration different from the first dopant concentration. In addition, a portion of the second electrode layer is converted to a hemispherical grain layer. More particularly, the first dopant concentration is greater than the second dopant concentration. Related structures are also discussed.