发明名称 |
Method of manufacturing a semiconductor device having wiring layers within the substrate |
摘要 |
A transistor element is formed on the surface of a silicon substrate. A tunnel is formed in the silicon substrate at a position right under the transistor element. A contact hole is formed to extend from the surface of the silicon substrate to the contact hole. Silicon oxide films are respectively formed on the inner surfaces of the tunnel and the contact hole. A wiring layer is buried in the tunnel and the contact hole. The wiring layer is connected to a diffusion layer of the transistor element.
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申请公布号 |
US5963838(A) |
申请公布日期 |
1999.10.05 |
申请号 |
US19950521105 |
申请日期 |
1995.08.30 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
YAMAMOTO, TADASHI;SUGIURA, SOUICHI |
分类号 |
H01L21/8242;H01L27/108;H01L29/417;(IPC1-7):H01L21/00;H01L21/84;H01L21/31;H01L21/469;H01L21/265;H01L21/44;H01L21/48;H01L21/465 |
主分类号 |
H01L21/8242 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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