| 摘要 |
<p>An apparatus for plating a wafer is provided having a support chamber and a plating tank. The support chamber has a circumferential wall provided with an open end, and a reduced diameter adjacent the open end for supporting the wafer to be plated above the plating tank. The support chamber has an interior volume for receiving a gas under pressure. The plating tank has a means for imparting a laminar flow to plating solution in the plating tank. A method of plating a wafer is also disclosed, comprising transferring a wafer to a support chamber, supplying a gas under pressure in said support chamber, bringing the wafer to be plated into contact with plating solution in a plating tank, maintaining the wafer in contact with the plating solution for a preselected time, and separating the wafer from the plating solution. <IMAGE></p> |
