METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to improve productivity of the semiconductor device, by minimizing a step difference between a cell region and a periphery without a planarization process. CONSTITUTION: An insulating layer is formed on a substrate(50), and the insulating layer is patterned to form a contact hole(58) on the substrate. Polysilicon is stacked on the insulating layer and contact hole to form a polysilicon layer. After photoresist is applied on the polysilicon layer, the photoresist is patterned by a photolithography method to form a photoresist pattern on the polysilicon layer. A storage electrode(70) is formed by etching an inside of a cell of the polysilicon layer vertically and by etching a side of a periphery slantingly with a mixture gas composed of HBr, Cl2, He, and O2 gas, using the photoresist pattern as an etching mask. A dielectric layer and a plate electrode are sequentially formed on the storage electrode.