| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to simplify a manufacturing process and to reduce a step difference, by simultaneously forming direct contacts in different impurity regions of a cell region and a peripheral region. CONSTITUTION: A gate electrode composed of a polysilicon layer, a metal-silicide layer and a first insulating layer are formed on a semiconductor substrate(20) in which an active region and an inactive region are defined. A SEG(Selective Epitaxial Growth) layer(32) having a thickness of more than 0.5 times as thick as the polysilicon layer and a thickness lower than the height of the gate electrode is formed the active region except the inactive region and gate electrode. Ions are injected into the substrate to form a source and a drain(34,34'). A second insulating layer is formed on the entire surface of the substrate. A contact hole for forming the source/drain is formed. An undoped second conductive layer is formed on the oxidation layer, filling up the contact hole. Contact plugs(40n,40p) are formed by etching the second conductive layer for planarization until at least an upper surface of the oxidation layer is exposed. N-type or P-type impurity ions are injected into the contact plug. A metal bit line(44) is evaporated on the entire surface of the substrate.
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