FIELD-EMISSION ELECTRON SOURCE

摘要

A field-emission electron source which comprises a field-emission electron source part formed on a p-type silicon substrate (1) and an n-channel field-effect transistor part formed on the p-type silicon substrate (1) in a position corresponding to the field-emission electron source part and in which the field-emission electron source part is provided in the drain region of the field-effect transistor part, and the field-emission current from the field-emission source part is controlled by a control voltage applied to the gate electrode (8) of the field-effect transistor part, wherein the drain region includes at least two wells (3, 4) with different impurity concentrations, the well (4) having the lower impurity concentration is provided at an end part of the drain region provided in contact with the channel region of the field-effect transistor part.