发明名称 |
METHOD FOR THE FORMATION OF RESIST PATTERNS |
摘要 |
Method for the formation of resist patterns by using a chemically amplified resist which comprises an alkali-insoluble base polymer or copolymer and an acid generator, in which the patternwise exposed film of said resist is developed with an organic alkaline developer in the presence of a surface active agent containing a higher alkyl group in a molecule thereof. The resist patterns have no drawback such as cracks and peeling, and thus can be advantageously used in the production of semiconductor devices such as LSIs and VLSIs.
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申请公布号 |
US2001001703(A1) |
申请公布日期 |
2001.05.24 |
申请号 |
US19970810773 |
申请日期 |
1997.03.05 |
申请人 |
MAKOTO TAKAHASHI |
发明人 |
TAKAHASHI MAKOTO;TAKECHI SATOSHI |
分类号 |
G03F7/004;G03F7/039;G03F7/32;H01L21/027;(IPC1-7):G03F7/038;G03F7/30 |
主分类号 |
G03F7/004 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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