发明名称 TEST METHOD OF SEMICONDUCTOR MEMORY DEVICE HAVING MANY MEMORY BANKS AND SEMICONDUCTOR MEMORY TEST APPARATUS
摘要 PURPOSE: A test method of semiconductor memory device having many memory banks and semiconductor memory test apparatus are provided to easily recognize a physical address of a fail memory cell by using many memory banks for detecting the fail memory cell. CONSTITUTION: A semiconductor memory device includes a memory cell allocated to a physical address, a memory cell array composed of many memory cells, a memory block composed of many memory cell arrays, a memory bank having many memory blocks(Block0-Block15), and many memory banks(Bank1,Bank2). The physical address consists of a row address and a column address. One of the memory banks is selected, and a data is written to memory cells allocated to a first address formed on the selected memory bank. The remaining banks of the memory banks are sequentially selected. A virtual second address is generated to discriminate each of memory cells of the first address. Each bit of the first and second addresses is varied, data stored in memory cells of the first address are sequentially read to the outside of the semiconductor memory device through a data pin. If the read data is different from a previously-written data, a fail memory cell is informed to the first and second address and a data pin number. The second address is an address for dividing the memory banks and the memory blocks.
申请公布号 KR100297709(B1) 申请公布日期 2001.05.24
申请号 KR19980014241 申请日期 1998.04.21
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 JUN, SUN GEUN;KANG, SANG SU
分类号 G01R31/28;G11C29/56;(IPC1-7):G11C29/00 主分类号 G01R31/28
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