| 摘要 |
<p>The invention relates to a method for producing a ridge waveguide in layer structures of III-V compound semiconductors, consisting of the following steps: a base structure formed on a semiconductor substrate (2) is created which comprises a first coating layer (3), an active zone (4) deposited on said first coating layer (3), a second coating layer (5) deposited on the active zone (4) and a contact layer (6) deposited on the second coating layer (5); a trench mask (13) is deposited and structured across the entire surface so as to define a trench area (14) which has approximately 20 times the width of a ridge (7) which is then created in the centre of the trench area (14) from the second coating layer (5) and the contact layer (6); additional doping atoms are introduced into the contact layer (6) and/or the doping atoms introduced in this way or doping atoms already present are activated; a substantially strip-shaped ridge mask (15) is created within the trench area (14); and the second coating layer (5) and the contact layer (6) are selectively etched using the trench mask (13) and ridge mask (15) as resist masks for forming the ridge (7) of the ridge wave guide inside the trench area (14).</p> |
