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发明名称
HIGH ASPECT RATIO SUB-MICRON CONTACT ETCH PROCESS IN AN INDUCTIVELY- COUPLED PLASMA PROCESSING SYSTEM
摘要
申请公布号
KR20010099887(A)
申请公布日期
2001.11.09
申请号
KR1020017007935
申请日期
2001.06.22
申请人
发明人
分类号
H01L21/3065
主分类号
H01L21/3065
代理机构
代理人
主权项
地址
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