| 摘要 |
A GTO (gate turn-off) thyristor has a field plate screen which, as seen in the direction perpendicular to the semiconductor surface, is in the form of a continuous covering over at least the space charge formation region of the base zone (1) of the cathode arrangement (10), the extent of the space charge zone being limited by a stopper zone which is of the base zone type but with heavier doping and which extends below the field plate screen at least to its edge. Preferably, an open-sided screen-free passage region (20) for field strength equipotential lines is provided below the field plate screen. |
