| 摘要 |
PURPOSE: A plasma etcher for fabricating a semiconductor is provided to prevent an over-etch of a wafer and a pattern defect, by eliminating the need to remove remaining electric charges so that an element delaying the entire process time of a plasma etch process is eliminated. CONSTITUTION: A wafer(4) is etched by plasma in a vacuum state in a reaction chamber(1). The wafer is fixed in an electrostatic chuck(10) installed in the lower portion inside the reaction chamber. Etch gas is induced and distributed to an upper electrode(2) installed inside the reaction chamber. Radio frequency(RF) power for generating plasma is applied to the upper electrode which is also connected to an RF power applying unit(3). A direct-current(DC) high voltage applying unit(11) applies a DC high voltage to the electrostatic chuck. A remaining charge removing unit for removing remaining charges charged in the electrostatic chuck and the wafer in a plasma etch process, is installed in the electrostatic chuck.
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