发明名称 APPARATUS AND METHOD FOR HEAT TREATING
摘要 PROBLEM TO BE SOLVED: To improve safety by simplifying a structure at a low cost and decreasing the leakage amount of an H2 gas as much as possible. SOLUTION: An apparatus for heat treating treats a wafer in a hydrogen atmosphere of an atmospheric pressure. A method for heat treating comprises the steps of once performing evacuation into vacuum in a reaction tube 3, then filling a nitrogen gas under the atmospheric pressure, and thereafter filling the hydrogen gas therein.
申请公布号 JP2002158230(A) 申请公布日期 2002.05.31
申请号 JP20010289775 申请日期 2001.09.21
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 YONEMITSU SHUJI;OZAWA MAKOTO;IZUMI SHOICHIRO;FUKUDA SHIGEO;KANO RIICHI
分类号 H01L21/205;H01L21/322;H01L21/324;(IPC1-7):H01L21/324 主分类号 H01L21/205
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