发明名称 |
APPARATUS AND METHOD FOR HEAT TREATING |
摘要 |
PROBLEM TO BE SOLVED: To improve safety by simplifying a structure at a low cost and decreasing the leakage amount of an H2 gas as much as possible. SOLUTION: An apparatus for heat treating treats a wafer in a hydrogen atmosphere of an atmospheric pressure. A method for heat treating comprises the steps of once performing evacuation into vacuum in a reaction tube 3, then filling a nitrogen gas under the atmospheric pressure, and thereafter filling the hydrogen gas therein.
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申请公布号 |
JP2002158230(A) |
申请公布日期 |
2002.05.31 |
申请号 |
JP20010289775 |
申请日期 |
2001.09.21 |
申请人 |
HITACHI KOKUSAI ELECTRIC INC |
发明人 |
YONEMITSU SHUJI;OZAWA MAKOTO;IZUMI SHOICHIRO;FUKUDA SHIGEO;KANO RIICHI |
分类号 |
H01L21/205;H01L21/322;H01L21/324;(IPC1-7):H01L21/324 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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