Capacitor production in an IC, especially for stacked capacitor production in a DRAM circuit

摘要

An IC capacitor is produced by forming a conductive prop (7) in an alternate conductive and sacrificial layer sequence, removing the sacrificial layers and forming a dielectric (9) on the exposed surfaces. A capacitor is produced in an IC by: (a) coating a support (2) with a layer sequence of alternate conductive layers (61) and sacrificial layers; (b) forming an opening in the layer sequence; (c) forming an conductive prop structure (7) in the opening; (d) anisotropically etching the layer sequence to the lateral dimensions of the capacitor; (e) selectively removing the sacrificial layers; (f) forming a capacitor dielectric (9) on the exposed surfaces of the first material layers (61) and the prop structure (7); and (g) forming a counterelectrode (10) on the dielectric surface.