发明名称 System for improved memory cell access
摘要 A voltage booting circuit for booting the switching signal applied to a column access passgate is employed to reduce the voltage drop across the passgate. Reduction of the voltage dropped across the passgate results in faster read and write times and improved noise margin. In one application the booted voltage is used only during a write operation, but not during a read. In another application, the booted voltage is used during both operations.
申请公布号 US5959933(A) 申请公布日期 1999.09.28
申请号 US19970999865 申请日期 1997.04.18
申请人 MICRON TECHNOLOGY, INC. 发明人 ZHENG, HUA
分类号 G11C7/00;G11C7/10;G11C11/4096;(IPC1-7):G11C8/00 主分类号 G11C7/00
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