| 摘要 |
PROBLEM TO BE SOLVED: To prevent fluorine which is separated from a reaction gas WF6 from being included in a wiring film, and to prevent the increase in the stress of the wiring film and the decrease of the reflectivity. SOLUTION: A purge process is made between a lower-layer formation process for performing treatment that makes the inside of a chamber as a vacuum atmosphere, at the same time introducing a reaction gas, and allowing a wiring film 6b of a lower layer to grow in a recessed part and a surface-layer formation process for performing purging treatment that laminates a wiring layer 6a of a surface layer for forming on the lower-layer wiring layer 6b. In the purge process, the partial pressure of fluorine separated from remaining WF6 in the chamber is reduced, thus reducing the ratio with which a fluorine constituent is included into the wiring film 6a of the upper layer.
|
