| 摘要 |
The present invention is directed to the prevention of a decrease in the resolution of a film shifter-type alternating phase shifting mask, and the complexity of the mask forming step, and discusses the structure of a novel alternating phase shifting mask, and a novel manufacturing method which does not require the etching for forming a shifter. To achieve this object, hydrogen silsesquioxane (flowable oxide (FOX)) is used as the material for the phase shifter. The optical characteristics of this film are very close to those of a quartz substrate, and the property that the in-surface variation (+/-3 sigma ) of the thickness is 1% or less, is close to that of SOG (Spin On Glass). The most advantageous aspect of the FOX being used for the mask manufacturing process is that, since the FOX film is etched at the same time as the resist development, with the alkaline developing solution used for etching the resist, there is no need to provide a particular step for etching the shifter.
|
