| 发明名称 |
Layered structure with a silicide layer and process for producing such a layered structure |
| 摘要 |
PCT No. PCT/DE96/00172 Sec. 371 Date Aug. 5, 1997 Sec. 102(e) Date Aug. 5, 1997 PCT Filed Feb. 1, 1996 PCT Pub. No. WO96/24952 PCT Pub. Date Aug. 15, 1996A process for producing a layered structure in which a silicide layer on a silicon substrate is subjected to local oxidation to cause the boundary layer side of the silicide layer to grow into the silicon substrate.
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| 申请公布号 |
US5958505(A) |
申请公布日期 |
1999.09.28 |
| 申请号 |
US19970894871 |
申请日期 |
1997.08.05 |
| 申请人 |
FORSCHUNGSZENTRUM JULICH GMBH |
发明人 |
MANTL, SIEGFRIED |
| 分类号 |
H01L21/28;H01L21/316;H01L21/3205;H01L21/321;H01L21/335;H01L21/336;H01L21/338;H01L21/74;H01L21/76;H01L21/768;H01L21/8234;H01L23/52;H01L27/088;H01L29/778;H01L29/78;H01L29/812;(IPC1-7):B05D5/12;H01L21/823 |
主分类号 |
H01L21/28 |
| 代理机构 |
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