| 摘要 |
PROBLEM TO BE SOLVED: To grow a semiconductor single crystal without contaminating the grown single crystal with impurities other than dopant impurities and oxygen and also to enhance the rotational symmetry of a semiconductor melt, in semiconductor crystal growth using a magnetic field- and current-applied Czochralski method. SOLUTION: An electrode formed out of a material having the same composition as that of the semiconductor single crystal to be grown is used as an electrode 6 for applying current to a semiconductor melt 2 retained in a magnetic field to pass the current through between the semiconductor melt 2 and a growing semiconductor single crystal 3. Also, the position 8 at which the electrode 6 is brought into contact with the semiconductor melt 2, is adjusted to a level higher than that of the principal surface 7 of the semiconductor melt 2. |
