| 摘要 |
PROBLEM TO BE SOLVED: To deposit a high quality non-single crystal semiconductor thin film at a high speed. SOLUTION: In a method for forming a deposited film, a non-single crystal semiconductor thin film is deposited on a substrate by cracking a gaseous starting material by generating plasma in a gaseous phase by introducing high frequency wave into a film forming chamber 102. The semiconductor thin film is deposited under such a condition that the pressure in the film forming chamber 102 and the frequency (f) of the high frequency power are respectively adjusted to less than or equal to 0.1 Torr and 0.05-5 GHz so that an inequality, 20<=PV.f<1/3> <=500 (mW.GHz<1/3> /cm<3> ) is satisfied among the depositing rate V (cm<3> ) of the film in the discharge space where the plasma is generated in the chamber 102, the high frequency power P(mW), and the frequency (f) (GHz) of the power. |
