| 发明名称 |
Manufacturing method of a nitride semiconductor device |
| 摘要 |
<p>A semiconductor device includes: a crystalline substrate including a primary surface and a crystal plane provided within the primary surface so as to have a surface orientation different from a surface orientation of the primary surface; a semiconductor layered structure grown over the crystalline substrate; and an active region provided at a portion in the semiconductor layer structure above the crystal plane. <IMAGE></p> |
| 申请公布号 |
EP1244141(A1) |
申请公布日期 |
2002.09.25 |
| 申请号 |
EP20020011557 |
申请日期 |
1999.09.10 |
| 申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
ISHIDA, MASAHIRO;NAKAMURA, SHINJI;ORITA, KENJI;IMAFUJI, OSAMU;YURI, MASAAKI |
| 分类号 |
H01L21/338;H01L21/205;H01L21/20;H01L29/04;H01L29/20;H01L29/205;H01L29/812;H01L29/861;H01L33/00;H01L33/06;H01L33/12;H01L33/14;H01L33/16;H01L33/22;H01L33/32;H01S5/223;H01S5/323;H01S5/343;(IPC1-7):H01L21/20;H01L21/36 |
主分类号 |
H01L21/338 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
