发明名称 Heat treatment of semiconductor wafers where upper heater directly heats upper wafer in its entirety and lower heater directly heats lower wafer in its entirety
摘要 A substrate processing apparatus includes a substrate supporting pedestal having an upper substrate supporting pedestal and a lower substrate supporting pedestal which are vertically stacked, an upper resistance heater provided above the upper substrate supporting pedestal so as to be opposite to the upper substrate supporting pedestal, and a lower resistance heater provided under the lower substrate supporting pedestal so as to be opposite to the lower substrate supporting pedestal. Each of the upper substrate supporting pedestal and the lower substrate supporting pedestal is capable of mounting a substrate or substrates in a substantially horizontal position, and the lower substrate supporting pedestal including an opening which exposes the substrate in its entirety or openings which expose the substrates in their entireties as viewed from under the lower substrate supporting pedestal.
申请公布号 US5960159(A) 申请公布日期 1999.09.28
申请号 US19970950185 申请日期 1997.10.14
申请人 KOKUSAI ELECTRIC CO., LTD. 发明人 IKEDA, FUMIHIDE;MACHIDA, JUNICHI;TOMITA, MASAYUKI;INOKUCHI, YASUHIRO;SHIMENO, KAZUHIRO;NOMURA, HISASHI;INADA, TETSUAKI
分类号 H01L21/00;(IPC1-7):F26B3/30 主分类号 H01L21/00
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