发明名称 Structure of an antenna effect monitor
摘要 An antenna effect monitor includes a transistor formed on a semiconductor substrate. The transistor gate is coupled to a doped polysilicon interconnect layer which is also coupled to an antenna effect monitoring unit. Several metal bonding pads float in an orderly fashion above the doped polysilicon interconnect layer without coupling with each other. Several small metal layers are formed in an orderly fashion above the doped polysilicon interconnect layer but are electrically coupled together by several via plugs in between. The top small metal layer is coupled to the top bonding pad. The bottom small metal layer is electrically coupled to the doped polysilicon interconnect layer. Then a passivation layer covers the substrate but leaves a pad opening to expose the top bonding pad.
申请公布号 US5959311(A) 申请公布日期 1999.09.28
申请号 US19980172459 申请日期 1998.10.14
申请人 UNITED MICROELECTRONICS CORP. 发明人 SHIH, HSUEH-HAO;WANG, MU-CHUN;WU, JUAN-YUAN;LUR, WATER
分类号 H01L23/485;H01L23/544;H01L23/58;(IPC1-7):H01L23/58 主分类号 H01L23/485
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