发明名称 |
Method of forming resin film of desired pattern on semiconductor substrate, semiconductor chip, semiconductor package |
摘要 |
A method of forming a resin film pattern, comprising the steps of (A) producing a resin film layer soluble in an organic solvent, on a substrate such as silicon wafer, even engineering plastics being usable as a resin of the resin film layer; (B) forming a resist image of desired pattern on the organic solvent-soluble resin film layer; (C) etching each of those parts of the organic solvent-soluble resin film layer which are not covered with the resist image, using the organic solvent; and (D) removing the resist image from the resulting, organic solvent-soluble resin film layer using a resist image remover which contains 0.01-10.0 parts-by-weight of arylsulfonic acid with respect to 100 parts-by-weight of solvent having a solubility parameter of 5.0-11.0. The step (D) may well be followed by the step (E) of processing the substrate which includes the resin film layer, with alcohol.
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申请公布号 |
US5958653(A) |
申请公布日期 |
1999.09.28 |
申请号 |
US19970888019 |
申请日期 |
1997.07.03 |
申请人 |
HITACHI CHEMICAL COMPANY, LTD. |
发明人 |
MATSUURA, HIDEKAZU;IWAZAKI, YOSHIHIDE |
分类号 |
H01L23/495;(IPC1-7):G03C5/00 |
主分类号 |
H01L23/495 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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