发明名称 Interconnection process of stacked semi-conductors chips and devices
摘要 <p>According to the method of the invention, wafers (P) each formed of one or more semiconductor chips are equipped with conductors (F), wires for example, connected to the leads (PC) of the chips and turned towards the side faces of the stack, then the chips are stacked and coated in a material (40) capable of later being selectively removed; next the side faces of the stack are cut out so as to reveal the sections (C) of the previous conductors (F), connections (Cx), intended to electrically interconnect the sections of these conductors (F) are formed on the faces of the stack, then the coating material (40) is selectively removed. <IMAGE></p>
申请公布号 EP0638933(B1) 申请公布日期 1999.09.29
申请号 EP19940401817 申请日期 1994.08.05
申请人 THOMSON-CSF 发明人 VAL, CHRISTIAN
分类号 H01L25/18;H01L25/065;H01L25/07;(IPC1-7):H01L25/065;H01L21/50 主分类号 H01L25/18
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